WFRF:(Malm B. Gunnar)
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- Haralson, ErikKTH,Mikroelektronik och Informationsteknik, IMIT (author)
NiSi integration in a non-selective base SiGeCHBT process
- Article/chapterEnglish2005
Publisher, publication year, extent ...
- Elsevier BV,2005
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-14539
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-14539URI
- https://doi.org/10.1016/j.mssp.2004.09.024DOI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
Classification
Notes
- QC 20100525 QC 20111012. 2nd International SiGe Technology and Device Meeting (ISTDM). Frankfurt, GERMANY. MAY 16-19, 2004
- A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 muOmega cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for f(t) and f(MAX), respectively.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Materialteknik hsv//swe
- ENGINEERING AND TECHNOLOGY Materials Engineering hsv//eng
- SiGeCHBT
- nickel silicide
- silicides
- si1-xgex
Added entries (persons, corporate bodies, meetings, titles ...)
- Suvar, E.KTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1sxan4r (author)
- Malm, B. GunnarKTH,Integrerade komponenter och kretsar(Swepub:kth)u13lag9j (author)
- Radamson, HenryKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1g2cqgr (author)
- Wang, Yong-BinKTH,Integrerade komponenter och kretsar(Swepub:kth)u1mxfvwt (author)
- Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4 (author)
- KTHMikroelektronik och Informationsteknik, IMIT (creator_code:org_t)
Related titles
- In:Materials Science in Semiconductor Processing: Elsevier BV8:03-jan, s. 245-2481369-80011873-4081
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