Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic base

• A novel SiGeC HBT process with a quasi-self-aligned emitter-base architecture and a fully nickel-silicided extrinsic base region has been developed. A very low total base resistance R-B was achieved along with simultaneous NiSi formation on the polycrystalline emitter and collector regions. Uniform silicide formation was obtained across the wafer, and the resistivity. of the Ni(SiGe:C) silicide layer was 24 mu Omega (.) cm. About 50-100 nm of lateral growth of silicide,. underneath the emitter pedestal was observed. DC and HF results with balanced f(T)/f(MAX) values of 41/42 GHz were demonstrated for 0.5 X 10 mu m(2) transistors.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

base resistance

carbon

heterojunction bipolar transistors (HBTs)

nickel

SiGe

SiGeC

silicide

silicon-germanium

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)