Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC

• In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power.

Keyword

4H-SiC

electrical characterizations

ion implantation

neutron irradiation

pn junction

Publication and Content Type

ref (subject category)

kon (subject category)