Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

• GaN/AIN multiple quantum well structures of 1, 5 and 20 periods were grown by molecular beam epitaxy (MBE). To investigate structural parameters, symmetrical scan (0002) and reciprocal space mapping in the vicinity of the GaN (10 15) plane were made by X-ray diffraction (XRD). The layer thickness, composition and relaxation were determined and gave good agreement with simulated results. The 20 period multiple quantum well (MQW) sample exhibited an intersubband resonance at 360 meV, which corresponds well to the structure data determined by XRD.

Nyckelord

FT-IR spectroscopy

intersubband transitions

X-ray diffraction

molecular beam epitaxy

multiple quantum wells

semiconducting III-V materials

devices

films

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