Capacitance transient study of the metastable M center in n-type 4H-SiC.

• The metastable M center in n-type 4H silicon carbide is studied in detail after it has been introduced by 2.5 MeV proton irradiation with a fluence of 1x10(12) cm(-2). The experimental procedures included deep-level transient spectroscopy, carrier capture coefficient and capacitance versus temperature measurements, and pulse-train measurements. The pulse-train measurements are reproduced by simulations. Three band-gap levels have previously been assigned to the M center: M-1 at E-C-0.42 eV, M-2 at E-C-0.63 eV, and M-3 at E-C-0.83 eV, where E-C is the conduction-band edge. Direct measurements of the majority-carrier capture cross sections show that the cross section values extracted from Arrhenius plots are about two orders of magnitude too large, indicating a large entropy factor. A detailed configuration diagram of the M center is presented, including charge state levels and reconfiguration barriers. Evidence in support of a fourth M center level, not explicitly observed, is presented. Isochronal and isothermal annealing experiments show that the M center anneal out between 310 and 370 degrees C in a process displaying first-order kinetics. The annealing process, which is shown to have an activation energy of 2.0 eV, is identified as dissociation.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

deep-level defects

4h silicon-carbide

nitrogen participation

spectroscopy

emission

traps

Electronics

Elektronik

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