Geometrical effects in high current gain 1100-V 4H-SiC BJTs

• This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain beta = 64 and a breakdown voltage of 1100 V. The high beta value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The BJTs show a clear emitter-size effect indicating that surface recombination has a significant influence on beta. A minimum distance of 2-3 mu m between the emitter edge and base contact implant was found adequate to avoid a substantial beta reduction.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

4H-SiC

bipolar junction transistor (BJT)

breakdown voltage

current gain

emitter-size effect

bipolar junction transistors

1800 v

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)