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- Hultquist, GunnarKTH,Korrosionslära (author)
Effects of O-2 dissociation on a porous platinum coating in the thermal oxidation of GaAs
- Article/chapterEnglish2006
Publisher, publication year, extent ...
- The Electrochemical Society,2006
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-15370
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-15370URI
- https://doi.org/10.1149/1.2150156DOI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
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Notes
- QC 20100525
- A 20-30-nm-thick porous Pt layer has been sputter-coated on a portion of a GaAs sample and subsequently the sample was oxidized at 500 degrees C in O-16(2) followed by O-18-enriched O-2. The oxide formed was characterized by Auger electron spectroscopy, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy, all with a lateral resolution of about 100 mu m. Away from the Pt area, a mm-ranged gradually decreasing degree of As oxidation was observed in the outermost oxide layer. In the Pt area, Ga was preferentially oxidized at the oxide/substrate interface producing a five to seven times thicker oxide than in an area without the influence of Pt. A strongly enhanced dissociation rate of O-2 on Pt particles and a subsequent O spillover to adjacent oxide explain the experimental observations. The mm-ranged spillover is believed to take place via fast lateral surface diffusion and results in the observed variation of oxidized As at the gas/oxide interface. In the Pt area, a high concentration gradient of dissociated oxygen across the oxide layer supplies a high flux of dissociated oxygen to the GaAs substrate where Ga is preferentially oxidized. The results clearly demonstrate that both a surface reaction and solid-state diffusion influence the oxidation rate. A localized high effective oxygen (O) activity that spills over to a nearby oxide area is believed to be a general phenomenon that is operating in oxides where a dissociating element such as Pt is present at O-2/oxide interfaces.
Subject headings and genre
- deuterium
Added entries (persons, corporate bodies, meetings, titles ...)
- Graham, M. J. (author)
- Wee, A. T. S. (author)
- Liu, R. (author)
- Sproule, G. I. (author)
- Dong, Q. (author)
- Anghel, C. (author)
- KTHKorrosionslära (creator_code:org_t)
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- In:Journal of the Electrochemical Society: The Electrochemical Society153:2, s. G182-G1860013-46511945-7111
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