Terahertz emission from phosphor centers in SiGe and SiGe/Si semiconductors

• Terahertz-range photoluminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5%, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of ∼ 2.3-3.2 cm-1 has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm2.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

Silicon-germanium

Terahertz emission

Pump intensities

Silicon laser operation

Laser optics

Optical pumping

Optical transitions

Phosphors

Photoexcitation

Superlattices

Semiconducting silicon compounds

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