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Strain-free low-def...
Strain-free low-defect-density bulk GaN with nonpolar orientations
- Article/chapterEnglish2006
Publisher, publication year, extent ...
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2011-02-01
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Springer Science and Business Media LLC,2006
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-155413
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-155413URI
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https://doi.org/10.1557/proc-0955-i03-04DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:kon swepub-publicationtype
Series
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Materials Research Society Symposium Proceedings,0272-9172 ;955
Notes
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QC 20141119
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Bulk GaN sliced in bars along (11-20) and (1-100) planes from a boule grown in the [0001] direction by HVPE was confirmed as strain free material with a low dislocation density by using several characterization techniques. The high-structural quality of the material allows photoluminescence studies of free excitons, principal donor bound excitons and their twoelectron satellites with regard to the optical selection rules. Raman scattering study of the bulk GaN with nonpolar orientations allows a direct access to the active phonon modes and a direct determination of their strain-free positions.
Subject headings and genre
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Paskov, P. P.
(author)
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Darakchieva, V.
(author)
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Kroeger, R.
(author)
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Hommel, D.
(author)
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Monemar, B.
(author)
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Lourdudoss, SebastianKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u16044fg
(author)
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Preble, E.
(author)
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Hanser, A.
(author)
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Williams, M. N.
(author)
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Tutor, M.
(author)
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KTHMikroelektronik och Informationsteknik, IMIT
(creator_code:org_t)
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In:MRS Proceedings: Springer Science and Business Media LLC1946-4274
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Paskova, T.
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Paskov, P. P.
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Darakchieva, V.
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Kroeger, R.
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Hommel, D.
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Monemar, B.
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Lourdudoss, Seba ...
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Preble, E.
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Hanser, A.
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Williams, M. N.
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Tutor, M.
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- ENGINEERING AND TECHNOLOGY
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MRS Proceedings
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Royal Institute of Technology