AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers

QS 2014
We report on the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs) based on the homogeneous integration of an InGaAs/GaAs VCSEL and an AlGaAs/GaAs pnp-heterojunction bipolar transistor (HBT). Epitaxial regrowth confinement, modulation doping, intracavity contacting and non-conducting mirrors are used to ensure a low-loss structure, and a variety of design variations are investigated for a proper internal biasing and current injection to ensure a wide operating range. Optimized devices show mW-range output power, mA-range base threshold current and high-temperature operation to at least 60°C with the transistor in its active mode of operation for base currents well beyond threshold. Current confinement schemes based on pnp-blocking layers or a buried tunnel junction are investigated as well as asymmetric current injection to improve the lateral feeding.

Reuterskiöld-Hedlund, CarlKTH,Integrerade komponenter och kretsar(Swepub:kth)u1rwhxan (author)
Yu, XingangKTH,Integrerade komponenter och kretsar(Swepub:kth)u1kvtypk (author)
Yang, ChenKTH,Integrerade komponenter och kretsar(Swepub:kth)u1785m7o (author)
Zabel, ThomasKTH,Integrerade komponenter och kretsar(Swepub:kth)u1ouqooh (author)
Hammar, MattiasKTH,Integrerade komponenter och kretsar(Swepub:kth)u1jfzgcj (author)
KTHIntegrerade komponenter och kretsar (creator_code:org_t)

By the author/editor: Xiang, Yu; Reuterskiöld-Hed ...; Yu, Xingang; Yang, Chen; Zabel, Thomas; Hammar, Mattias

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