Bias-temperature instability in single-layer graphene field-effect transistors

• We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors. Both negative BTI and positive BTI can be benchmarked using models developed for Si technologies. In particular, recovery follows the universal relaxation trend and can be described using the established capture/emission time map approach. We thereby propose a general methodology for assessing the reliability of graphene/dielectric interfaces, which are essential building blocks of graphene devices. (C) 2014 AIP Publishing LLC.

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NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)

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