Defects and diffusion in high purity silicon for detector applications

• In this contribution we review some recent results on defects occurring after irradiation and thermal treatment of silicon detectors for ionizing radiation. In particular, the annealing of the prominent divacancy centre and the concurrent growth of a new double acceptor centre, assigned to the divacancy-oxygen pair, is treated in detail. The detectors were fabricated using oxygenated high purity float zone (FZ) silicon wafers of n-type in order to improve the radiation hardness. The results obtained have important implication on our current understanding of the degradation of silicon detectors at high radiation fluences and suggest that a new concept for optimised impurity/defect engineering needs to be developed.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

Annealing

Crystal defects

Degradation

Diffusion

Heat treatment

Ionizing radiation

Irradiation

Leakage currents

Oxygen

Radiation detectors

Radiation hardening

Conduction band edges

Float zone (FZ) silicon

Oxygenation

Silicon detectors

Silicon wafers

Publication and Content Type

ref (subject category)

kon (subject category)