Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's

QC 20141212
The soft gate-oxide breakdown event is observed to have negligible impact on the intrinsic parameters of even a narrow nFET. However, during subsequent wear-out of the breakdown path a significant impact of gate-to-channel breakdowns on nFET characteristics is found. It is also shown that i) the effect of voltage stress on gate oxide and ii) apparent electrical effects have to be corrected for to properly understand the intrinsic nature of the breakdown.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
CMOS integrated circuits
Computer simulation
Electric resistance
Extrapolation
Leakage currents
Parameter estimation
Threshold voltage
Transconductance
Circuit simulations
Gate-oxides
Oxide wear-out
Voltage stress
MOSFET devices

Av författaren/redakt...: Kaczer, B.; De Keersgieter, ...; Mahmood, Salman; Degraeve, R.; Groeseneken, G.

Om ämnet

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.