Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 mu m

• Results on strained InGaAs quantum well vertical cavity surface emitting lasers for optical interconnection applications are reported. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm is demonstrated at room temperature. The metal-organic vapour-phase epitaxy grown structure was processed as top p-type distribute Bragg reflector oxide-confined devices.

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