Search: (WFRF:(Karlsson R.)) srt2:(2000-2004)
> (2000) >
Epitaxial growth of...
Epitaxial growth of beta-SiC on ion-beam synthesized beta-SiC : Structural characterization
-
Romano-Rodriguez, A. (author)
-
Perez-Rodriguez, A. (author)
-
Serre, C. (author)
-
show more...
-
Morante, J. R. (author)
-
Esteve, J. (author)
-
Acero, M. C. (author)
-
Kögler, R. (author)
-
Skorupa, W. (author)
-
- Östling, Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
-
- Nordell, Nils (author)
- Microelectronics Center, Sweden
-
Karlsson, S. (author)
-
Van Landuyt, J. (author)
-
show less...
-
(creator_code:org_t)
- Trans Tech Publications Inc. 2000
- 2000
- English.
-
In: Silicon Carbide and Related Materials - 1999 Pts, 1 & 2. - : Trans Tech Publications Inc.. ; , s. 309-312
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.4...
-
show less...
Abstract
Subject headings
Close
- In this work we present for the first time, to our knowledge, the CVD epitaxial growth of β-SiC using an ion beam synthesized (IBS) β-SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 °C. The ion beam synthesized continuous layer is constituted by β-SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Keyword
- CVD growth
- FTIR
- ion beam synthesis
- TEM
- XRD
Publication and Content Type
- ref (subject category)
- kon (subject category)
To the university's database
- By the author/editor
-
Romano-Rodriguez ...
-
Perez-Rodriguez, ...
-
Serre, C.
-
Morante, J. R.
-
Esteve, J.
-
Acero, M. C.
-
show more...
-
Kögler, R.
-
Skorupa, W.
-
Östling, Mikael
-
Nordell, Nils
-
Karlsson, S.
-
Van Landuyt, J.
-
show less...
- About the subject
-
- ENGINEERING AND TECHNOLOGY
-
ENGINEERING AND ...
-
and Materials Engine ...
- Articles in the publication
- Silicon Carbide ...
- By the university
-
Royal Institute of Technology