Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si

Intarasiri, S.Institute for Science and Technology Research and Development, Chiang Mai University (författare)

QC 20100525
VR-Materials Science
Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 degrees C. Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) was used to investigate depth distributions of the implanted ions. Infrared transmittance (IR) and Raman scattering measurements were used to characterize the formation of SiC in the implanted Si substrate. X-ray diffraction analysis (XRD) was used to characterize the crystalline quality in the surface layer of the sample. The formation of 3C-SiC and its crystalline structure obtained from the above mentioned techniques was finally confirmed by transmission electron microscopy (TEM). The results show that 3C-SiC is directly formed during implantation, and that the subsequent high-temperature annealing enhances the quality of the polycrystalline SiC.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
ion beam synthesis (IBS)
silicon
silicon carbide (SiC)
infrared spectroscopy (IR)
Raman spectroscopy
time-of-flight energy elastic recoil detection analysis (ToF-E-ERDA)
X-ray diffraction (XRD) analysis
transmission electron microscopy (TEM)
ion-beam synthesis
silicon
layers
carbide
growth
carbon
films
Electrical engineering, electronics and photonics
TECHNOLOGY

Hallén, Anders.Uppsala universitet,KTH,Mikroelektronik och Informationsteknik, IMIT,Jonfysik(Swepub:uu)anhal173 (författare)
Lu, JunUppsala universitet,Jonfysik(Swepub:uu)jlu23482 (författare)
Jensen, JensUppsala universitet,Jonfysik(Swepub:uu)jejen103 (författare)
Yu, L. D. (författare)
Bertilsson, KentMittuniversitetet,Institutionen för informationsteknologi och medier (-2013)(Swepub:miun)kenber (författare)
Wolborski, M.KTH (författare)
Singkarat, S.FNRF, Department of Physics, Faculty of Science, Chiang Mai University (författare)
Possnert, GöranUppsala universitet,Jonfysik(Swepub:uu)gpo27116 (författare)
Institute for Science and Technology Research and Development, Chiang Mai UniversityMikroelektronik och Informationsteknik, IMIT (creator_code:org_t)

Ingår i:Applied Surface Science: Elsevier BV253:11, s. 4836-48420169-43321873-5584

Av författaren/redakt...: Intarasiri, S.; Hallén, Anders.; Lu, Jun; Jensen, Jens; Yu, L. D.; Bertilsson, Kent; visa fler...; Wolborski, M.; Singkarat, S.; Possnert, Göran; visa färre...

Om ämnet

Av lärosätet: Kungliga Tekniska Högskolan; Mittuniversitetet; Uppsala universitet

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