Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC

• In this experiment, carbon ions at 40 keV were implanted into (10 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at 800-1000 degrees C. Glancing incidence X-ray diffraction (GIXRD) was used to characterize the crystalline quality and estimate the grain size of nano-crystalline 3C-SiC. Activation energy for the growth of 3C-SiC was evaluated following the annealing behaviour of the GIXRD-characteristic 3C-SiC (111) peaks. It was found that the 3C-SiC was directly formed during ion implantation at this substrate temperature and the activation energy of the process was about 0.05 eV. Such a low energy was explained in terms of ion beam induced precipitate formation.

Ämnesord

NATURVETENSKAP  -- Fysik -- Subatomär fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Subatomic Physics (hsv//eng)

Nyckelord

ion beam synthesis (IBS)

silicon

silicon carbide (SiC)

glancing incidence X-ray diffraction (GIXRD)

activation energy

initial-stage

silicon

carbide

si

epitaxy

si(001)

quality

carbon

films

Nuclear physics

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