Interface engineering routes for a future cmos ge-based technology

• We present an overview study of two germanium interface engineering routes, firstly a germanate formation via La2O3 and Y2O3, and secondly a barrier layer approach using Al2O3 and Tm2O3. The interfacial composition, uniformity, thickness, band gap, crystallinity, absorption features and valence band offset are determined using X-ray photoelectron spectroscopy, ultra violet variable angle spectroscopic ellipsometry, and high resolution transmission electron microscopy. The correlation of these results with electrical characterization data make a case for Ge interface engineering with rare-earth inclusion as a viable route to achieve high performance Ge CMOS.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Absorption spectroscopy

Characterization

Energy gap

Germanium

High resolution transmission electron microscopy

Manufacture

Nanosystems

Spectroscopic ellipsometry

Absorption features

Barrier layers

Crystallinities

Electrical characterization

Interface engineering

Interfacial composition

Valence band offsets

Variable angle spectroscopic ellipsometry

X ray photoelectron spectroscopy

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)