Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors

• We study the impact of hot-carrier degradation (HCD) on the performance of graphene field-effect transistors (GFETs) for different polarities of HC and bias stress. Our results show that the impact of HCD consists in a change of both charged defect density and carrier mobility. At the same time, the mobility degradation agrees with an attractive/repulsive scattering asymmetry and can be understood based on the analysis of the defect density variation.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Carrier mobility

Defect density

Defects

Graphene

Hot carriers

Bias stress

Charged defect density

Density variations

Graphene field effect transistor (GFETs)

Graphene field-effect transistors

Hot carrier degradation

Hot carrier stress

Mobility degradation

Field effect transistors

Publikations- och innehållstyp

ref (ämneskategori)

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