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Conductivity modula...
Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes
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- Salemi, Arash (författare)
- KTH,Integrerade komponenter och kretsar,KTH Royal Institute Technology Integrated Devices and Circu, Sweden
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- Elahipanah, Hossein (författare)
- KTH,Integrerade komponenter och kretsar,KTH Royal Institute Technology Integrated Devices and Circu, Sweden
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- Buono, B. (författare)
- Fairchild Semicond, Sweden
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- Hallén, Anders (författare)
- KTH,Integrerade komponenter och kretsar,KTH Royal Institute Technology Integrated Devices and Circu, Sweden
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- Ul-Hassan, Jawad (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Bergman, Peder (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Malm, Gunnar (författare)
- KTH,Integrerade komponenter och kretsar,KTH Royal Institute Technology Integrated Devices and Circu, Sweden
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- Zetterling, Carl-Mikael (författare)
- KTH,Integrerade komponenter och kretsar,KTH Royal Institute Technology Integrated Devices and Circu, Sweden
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar,KTH Royal Institute Technology Integrated Devices and Circu, Sweden
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(creator_code:org_t)
- IEEE conference proceedings, 2015
- 2015
- Engelska.
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Ingår i: Proceedings of the International Symposium on Power Semiconductor Devices and ICs. - : IEEE conference proceedings. - 9781479962594 - 9781479962617 ; , s. 269-272
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Degradation-free ultrahigh-voltage (>10 kV) PiN diodes using on-axis 4H-SiC with low forward voltage drop (VF = 3.3 V at 100 A/cm2) and low differential on-resistance (RON = 3.4 m.cm2) are fabricated, measured, and analyzed by device simulation. The devices show stable on-state characteristics over a broad temperature range up to 300 °C. They show no breakdown up to 10 kV, i.e., the highest blocking capability for 4H-SiC devices using on-axis to date. The minority carrier lifetime (τP) is measured after epitaxial growth by time resolved photoluminescence (TRPL) technique at room temperature. The τP is measured again after device fabrication by open circuit voltage decay (OCVD) up to 500 K.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
Nyckelord
- bipolar degradation-free
- breakdown voltage
- lifetime enhancement
- OCVD
- On-axis 4H-SiC
- on-resistance
- PiN diode
- ultrahigh-voltage
- VF
- Carrier lifetime
- Diodes
- Electric breakdown
- Open circuit voltage
- Power electronics
- Semiconductor diodes
- Semiconductor junctions
- Semiconductor quantum wells
- Silicon carbide
- Bipolar degradations
- On-axis
- Ultra high voltage
- Semiconductor devices
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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