Hot-carrier degradation in single-layer double-gated graphene field-effect transistors

• We report a first study of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs). Our results show that HCD in GFETs is recoverable, similarly to the bias-temperature instability (BTI). Depending on the top gate bias polarity, the presence of HCD may either accelerate or suppress BTI. Contrary to BTI, which mainly results in a change of the charged trap density in the oxide, HCD also leads to a mobility degradation which strongly correlates with the magnitude of the applied stress.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Graphene

Hot carriers

Integrated circuits

Applied stress

Bias temperature instability

Charged traps

Graphene field effect transistor (GFETs)

Graphene field-effect transistors

Hot carrier degradation

Mobility degradation

Single layer

Field effect transistors

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