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Effect of Ion Bomba...
Effect of Ion Bombardment on the Properties of Hydrogenated Amorphous Silicon Prepared from Undiluted and Xenon-Diluted Silane
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Dutta, Joydeep (author)
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McElheny, P. J. (author)
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Suzuki, A. (author)
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Ganguly, G. (author)
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Matsuda, A. (author)
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Hasezaki, K. (author)
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Mashima, S. (author)
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- 1992
- 1992
- English.
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In: Japanese Journal of Applied Physics. - 0021-4922 .- 1347-4065. ; 31:3B, s. L299-L302
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The contribution of ion bombardment to the growth of hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapour deposition from silane and xenon-diluted silane source gases was studied by applying an external d.c. voltage to the substrate electrode. The role played by the xenon ions in the growth of the materials prepared from xenon-diluted silane source gas has been considered. It is demonstrated that the xenon ions are responsible for the growth of the materials showing stable photoconductivity behaviour under light illumination.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- Gark conductivity
- Gas effusion
- Gass spectroscopy
- Genon dilution
- Ghotoconductivity
- Ghotodegradation
- Glasma-enhanced chemical vapour deposition
- Gydrogenated amorphous silicon
- Films - Chemical Vapor Deposition
- Photoconductivity - Degradation
- Xenon - Ion Sources
- Hydrogenated Amorphous Silicon
- Ion Bombardment
- Xenon Dilution
- Semiconducting Silicon
Publication and Content Type
- ref (subject category)
- art (subject category)
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