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Effect of Ion Bombardment on the Properties of Hydrogenated Amorphous Silicon Prepared from Undiluted and Xenon-Diluted Silane

Dutta, Joydeep (author)
McElheny, P. J. (author)
Suzuki, A. (author)
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Ganguly, G. (author)
Matsuda, A. (author)
Hasezaki, K. (author)
Mashima, S. (author)
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1992
1992
English.
In: Japanese Journal of Applied Physics. - 0021-4922 .- 1347-4065. ; 31:3B, s. L299-L302
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The contribution of ion bombardment to the growth of hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapour deposition from silane and xenon-diluted silane source gases was studied by applying an external d.c. voltage to the substrate electrode. The role played by the xenon ions in the growth of the materials prepared from xenon-diluted silane source gas has been considered. It is demonstrated that the xenon ions are responsible for the growth of the materials showing stable photoconductivity behaviour under light illumination.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

Keyword

Gark conductivity
Gas effusion
Gass spectroscopy
Genon dilution
Ghotoconductivity
Ghotodegradation
Glasma-enhanced chemical vapour deposition
Gydrogenated amorphous silicon
Films - Chemical Vapor Deposition
Photoconductivity - Degradation
Xenon - Ion Sources
Hydrogenated Amorphous Silicon
Ion Bombardment
Xenon Dilution
Semiconducting Silicon

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ref (subject category)
art (subject category)

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