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Protective capping ...
Protective capping and surface passivation of III-V nanowires by atomic layer deposition
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Dhaka, Veer (författare)
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Perros, Alexander (författare)
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Naureen, Shagufta (författare)
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Shahid, Naeem (författare)
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Jiang, Hua (författare)
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Kakko, Joona-Pekko (författare)
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Haggren, Tuomas (författare)
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Kauppinen, Esko (författare)
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- Srinivasan, Anand (författare)
- KTH,Halvledarmaterial, HMA
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Lipsanen, Harri (författare)
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(creator_code:org_t)
- American Institute of Physics (AIP), 2016
- 2016
- Engelska.
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Ingår i: AIP Advances. - : American Institute of Physics (AIP). - 2158-3226. ; 6:1
- Relaterad länk:
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https://doi.org/10.1...
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https://aip.scitatio...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Low temperature (similar to 200 degrees C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2 angstrom) film. For InP NWs, the best passivation (similar to 2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
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- Av författaren/redakt...
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Dhaka, Veer
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Perros, Alexande ...
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Naureen, Shaguft ...
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Shahid, Naeem
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Jiang, Hua
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Kakko, Joona-Pek ...
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visa fler...
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Haggren, Tuomas
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Kauppinen, Esko
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Srinivasan, Anan ...
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Lipsanen, Harri
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visa färre...
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Nanoteknik
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AIP Advances
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Kungliga Tekniska Högskolan