Integration of distributed Ge islands onto Si wafers by adhesive wafer bonding and low-temperature Ge exfoliation

• We present a novel and highly efficient wafer-level batch transfer process for populating silicon (Si) wafers with distributed islands of thin single-crystalline germanium (Ge) layers. This is achieved by transferring Ge from a Si wafer containing thick Ge dies to a Si target wafer by adhesive wafer-bonding and subsequent low-temperature Ge exfoliation.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Publication and Content Type

ref (subject category)

kon (subject category)