Improvements in Realizing 4H-SiC Thermal Neutron Detectors

QC 20160426
In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of B-10 inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted B-10 thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.

Vervisch, V. (author)
Ottaviani, L. (author)
Szalkai, D. (author)
Vermeeren, L. (author)
Lyoussi, A. (author)
Kuznetsov, A. (author)
Lazar, M. (author)
Klix, A. (author)
Palais, O. (author)
Hallén, AndersKTH,Integrerade komponenter och kretsar(Swepub:kth)u11ywmz1 (author)
KTHIntegrerade komponenter och kretsar (creator_code:org_t)

In:ISRD 15 - INTERNATIONAL SYMPOSIUM ON REACTOR DOSIMETRY: EDP Sciences9782759819294

By the author/editor: Issa, F.; Vervisch, V.; Ottaviani, L.; Szalkai, D.; Vermeeren, L.; Lyoussi, A.; show more...; Kuznetsov, A.; Lazar, M.; Klix, A.; Palais, O.; Hallén, Anders; show less...

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MEDICAL AND HEALTH SCIENCES: MEDICAL AND HEAL ...; and Medical Biotechn ...; and Biomaterials Sci ...

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