Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors

• We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare the results obtained on the high-k top gate and SiO2 back gate of the same device and show that SiO2 gate is more stable with respect to BTI.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

Graphene

Graphene transistors

Integrated circuits

Reconfigurable hardware

Back gates

Bias temperature instability

Graphene field-effect transistors

High- k

Negative bias temperature instability

Single layer

Stress time

Top gate

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