4H-SiC neutron sensors based on ion implanted 10B neutron converter layer

• In the framework of the I-SMART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, 10B ions have been implanted into the Al metallic contact of a p-n diode to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Acceleratorfysik och instrumentering (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Accelerator Physics and Instrumentation (hsv//eng)

Nyckelord

Geometry

Ion implantation

Ions

Neutron sources

Neutrons

Nuclear instrumentation

Semiconductor diodes

Silicon carbide

Electrical behaviors

Harsh environment

Metallic contacts

Neutron converters

Neutron sensors

Radiation detection system

Smart projects

Technological process

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