Material aspects of wide temperature range amplifier design in SiC bipolar technologies

• Silicon carbide (SiC) is the main semiconductor alternative for low loss high voltage devices. The wide energy band gap also makes it suitable for extreme environment electronics, including very high temperatures. Operating integrated electronics at 500-600 °C poses several materials challenges. However, once electronics is available for these high temperatures, the added challenge is designing integrated circuits capable of operating in the entire range from room temperature to 500 °C. Circuit designers have to take into account parameter variations of resistors and transistors, and models are needed for several temperatures. A common circuit design technique to manage parameter variations between different transistors, without wide temperature variations, is to use negative feedback in amplifier circuits. In this paper we show that this design technique is also useful for adapting to temperature changes during operation. Two different amplifier designs in SiC are measured and simulated from room temperature up to 500 °C.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

electrical properties

microelectronics

semiconductor devices

Design

Electric properties

Energy gap

Feedback

Integrated circuit manufacture

Reconfigurable hardware

Semiconducting silicon

Silicon carbide

Transistors

Wide band gap semiconductors

Circuit design techniques

Extreme environment

High voltage devices

Integrated electronics

Silicon carbides (SiC)

Temperature changes

Temperature variation

Wide temperature ranges

Feedback amplifiers

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)