4H-SiC nMOSFETs with As-Doped S/D and NbNi silicide ohmic contacts

• 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts were demonstrated for radiation-hard CMOS electronics. The threshold voltage Vth was designed to be 3.0 V by TCAD simulation, and was 3.6 – 3.8 V at the fabricated devices. On / off ratio was approximately 105.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

Carbon aggregation

Harsh environment

nMOSFET

SiC

Carbon

Electric breakdown

Electric contactors

MOSFET devices

Ohmic contacts

Silicides

Threshold voltage

As-doped

Fabricated device

nMOSFETs

On/off ratio

Radiation hard

TCAD simulation

Silicon carbide

Publication and Content Type

ref (subject category)

kon (subject category)