id:"swepub:oai:DiVA.org:kth-197368"
Search: id:"swepub:oai:DiVA.org:kth-197368" > Digital Predistorti...
- 1 of 1
- Previous record
- Next record
- To hitlist
- Amin, ShoaibHögskolan i Gävle,KTH,Signalbehandling,ACCESS Linnaeus Centre,University of Gävle, Sweden,Elektronik,Department of Signal Processing, School of Electrical Engineering, KTH (author)
Digital Predistortion of Single and Concurrent Dual BandRadio Frequency GaN Amplifiers with Strong NonlinearMemory Effects
- Article/chapterEnglish2017
Publisher, publication year, extent ...
- IEEE Press,2017
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-197368
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-197368URI
- https://doi.org/10.1109/TMTT.2016.2642948DOI
- https://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-23117URI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
Classification
Notes
- QC 20161205
- Electrical anomalies due to trapping effects in gallium nitride (GaN) power amplifiers (PAs) give rise to long-term or strong memory effects. We propose novel models based on infinite impulse response fixed pole expansion techniques for the behavioral modeling and digital predistortion of single-input single-output (SISO) and concurrent dual-band GaN PAs. Experimental results show that the proposed models outperform the corresponding finite impulse response (FIR) models by up to 17 dB for the same number of model parameters. For the linearization of a SISO GaN PA, the proposed models give adjacent channel power ratios (ACPRs) that are 7-17 dB lower than the FIR models. For the concurrent dual-band case, the proposed models give ACPRs that are 9-14 dB lower than the FIR models.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Signalbehandling hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Signal Processing hsv//eng
- Behavioral modeling
- concurrent dual band
- digital predistortion (DPD)
- finite impulse response (FIR)
- infinite impulse response (IIR)
- power amplifiers (PAs)
- radio frequency
- single-input single-output (SISO)
- Intelligent industri
Added entries (persons, corporate bodies, meetings, titles ...)
- Händel, PeterKTH,Signalbehandling,ACCESS Linnaeus Centre,Department of Signal Processing, School of Electrical Engineering, KTH(Swepub:kth)u1htctiy (author)
- Rönnow, DanielHögskolan i Gävle,Elektronik(Swepub:hig)dalrow (author)
- KTHSignalbehandling (creator_code:org_t)
Related titles
- In:IEEE transactions on microwave theory and techniques: IEEE Press65:7, s. 2453-24640018-94801557-9670
Internet link
Find in a library
- IEEE transactions on microwave theory and techniques (Search for host publication in LIBRIS)
To the university's database
- 1 of 1
- Previous record
- Next record
- To hitlist
Find more in SwePub
- By the author/editor
- Amin, Shoaib
- Händel, Peter
- Rönnow, Daniel
- About the subject
-
- ENGINEERING AND TECHNOLOGY
- ENGINEERING AND ...
- and Electrical Engin ...
- and Signal Processin ...
- Articles in the publication
- IEEE transaction ...
- By the university
- Royal Institute of Technology
- University of Gävle
Search outside SwePub
- Extend your search to:
- Google Book Search
- Google Scholar
Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.
- Copyright © LIBRIS - National Library Systems
- LIBRIS.kb.se
