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Silicon Carbide Tec...
Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes
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- Salemi, Arash, 1976- (författare)
- KTH,Integrerade komponenter och kretsar,High Power SiC Devices
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- Östling, Mikael, Professor (preses)
- KTH,Integrerade komponenter och kretsar
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- Zetterling, Carl-Mikael, Professor (preses)
- KTH,Integrerade komponenter och kretsar
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- Hallen, Anders, Professor (preses)
- KTH,Integrerade komponenter och kretsar
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Kaminski, Nando (opponent)
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(creator_code:org_t)
- ISBN 9789177291831
- KTH Royal Institute of Technology, 2017
- Engelska 126 s.
- Relaterad länk:
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https://kth.diva-por... (primary) (Raw object)
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https://kth.diva-por...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Silicon carbide (SiC) is an attractive material for high-voltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity. High- and ultra-high-voltage silicon carbide bipolar devices, such as bipolar junction transistors (BJTs) and PiN diodes, have the advantage of a low ON-resistance due to conductivity modulation compared to unipolar devices. However, in order to be fully competitive with unipolar devices, it is important to further improve the off-state and on-state characteristics, such as breakdown voltage, leakage current, common-emitter current gain, switching, current density, and ON-resistance.In order to achieve a high breakdown voltage with a low leakage current, an efficient and easy to fabricate junction edge protection or termination is needed. Among different proposed junction edge protections, a mesa design integrated with junction termination extensions (JTEs) is a powerful approach. In this work, implantation-free 4H-SiC BJTs in two classes of voltage, i.e., 6 kV-class and 15 kV-class with an efficient and optimized implantation-free junction termination (O-JTE) and multiple-shallow-trench junction termination extension (ST-JTE) are designed, fabricated and characterized. These terminations result in high termination efficiency of 92% and 93%, respectively.The 6 kV-class BJTs shows a maximum current gain of β = 44. A comprehensive study on the geometrical design is done in order to improve the on-state performances. For the first time, new cell geometries (square and hexagon) are presented for the SiC BJTs. The results show a significant improvement of the on-state characteristics because of a better utilization of the base area. At a given current gain, new cell geometries show a 42% higher current density and 21% lower ON-resistance. The results of this study, including an optimized fabrication process, are utilized in the 15 kV-class BJTs where a record high current gain of β = 139 is achieved.Ultra-high-voltage PiN diodes in two classes of voltage, i.e., 10+ kV using on-axis 4H-SiC and 15 kV-class off-axis 4H-SiC, are presented. O-JTE is utilized for 15 kV-class PiN diodes, while three steps ion-implantation are used to form the JTE in 10+ kV PiN diodes. Carbon implantation followed by high-temperature annealing is also performed for the 10+ kV PiN diodes in order to enhance the lifetime. Both type diodes depict conductivity modulation in the drift layer. No bipolar degradation is observed in 10+ kV PiN diodes.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Informations- och kommunikationsteknik
- Information and Communication Technology
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