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Effect of UV light ...
Effect of UV light irradiation on SiC dry etch rates
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Leerungnawarat, P. (författare)
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Cho, H. (författare)
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Pearton, S. J. (författare)
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- Zetterling, Carl-Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- Springer Science and Business Media LLC, 2000
- 2000
- Engelska.
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 29:3, s. 342-346
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Inductively Coupled Plasma etching of 4H-SiC under ultraviolet illumination was examined for SF6/Ar and Cl-2/Ar chemistries. Etch rate enhancements up to a factor of 8 were observed with UV light irradiation during Cl-2/Ar etching. The enhancement mechanism is related to photodesorption of SiClx and CClx species. Surface morphologies were unchanged as a result of the UV enhancement with Cl-2/Ar discharges. By contrast, there was no effect of UV irradiation on the SiC etch rates in SF6/Ar plasmas, but the surfaces were typically smoother than those obtained without the ultraviolet illumination. In the SF6/Ar chemistry the rate-limiting steps are either Si-C bond-breaking or supply of fluorine radicals to the surface, and not desorption of the SiFx and CFx etch products.
Nyckelord
- plasma etching
- inductively coupled plasma
- 4H-SiC
- ultraviolet illumination
- via holes
- inductively-coupled plasma
- power devices
- nf3
- chemistries
- semiconductor
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- art (ämneskategori)
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