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Carrier lifetime in...
Carrier lifetime investigation in 4H-SiC grown by CVD and sublimation epitaxy
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- Grivickas, P. (författare)
- Dept. of Solid State Electronics, Roy. Inst. Technol., E., Kista-Stockholm, Sweden
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- Galeckas, A. (författare)
- Dept. of Solid State Electronics, Roy. Inst. Technol., E., Kista-Stockholm, Sweden
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- Linnros, Jan (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT,Dept. of Solid State Electronics, Roy. Inst. Technol., E., Kista-Stockholm, Sweden
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Grivickas, V. (författare)
- Inst. of Mat. Sci. and Appl. Res., Vilnius Univ., Sauletekio 10, 2054, Vilnius, Lithuania
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- Tellefsen, J. A. (författare)
- Department of Physics II, Roy. Inst. of Technology, S-100 44, Stockholm, Sweden
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Dept of Solid State Electronics, Roy. Inst. Technol., E., Kista-Stockholm, Sweden Mikroelektronik och informationsteknik, IMIT (creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Materials Science in Semiconductor Processing. - 1369-8001 .- 1873-4081. ; 4:03-jan, s. 191-194, s. 191-194
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Depth-resolved carrier lifetime measurements were performed in low-doped epitaxial layers of 4H silicon carbide samples. The technique used was a pump-and-probe technique where carriers are excited by an above-bandgap laser pulse and probed by free carrier absorption. Results from chemical vapour deposition samples show that lifetimes as high as 2 mus may be observed in the mid-region of 40 mum thick epilayers. For epilayers grown by the sublimation method decay transients were characterised by a fast (few nanoseconds) initial recombination, tentatively assigned to the 'true' lifetime, whereas a slow tail of several hundred microsecond decay time was assigned to trapping centres. From the saturation of this level at increased pumping we could derive the trapping concentration and their depth distribution peaking at the epilayer/substrate interface.
Nyckelord
- carrier lifetime
- SiC
- pump-probe technique
- trapping
- TECHNOLOGY
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- art (ämneskategori)
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