Modeling the variation of the low-frequency noise in polysilicon emitter bipolar junction transistors

• The variation of the low-frequency noise in polysilicon emitter bipolar junction transistors (BJTs) was investigated as a function of emitter area (A(E)) For individual BJTs with submicron-sized As, the low-frequency noise strongly deviated from a 1/f-dependence. The averaged noise varied as 1/f, with a magnitude proportional to A(E)(-1), while the variation in the noise level was found to vary as A(E)(-1.5). A new expression that takes into account this deviation is proposed for SPICE modeling of the the low-frequency noise, The traps responsible for the noise were located to the thin SiO2 interface between the polysilicon and monosilicon emitter, The trap's energy level, areal concentration and capture cross-section were estimated to 0.31 eV, 6 x 10(8) cm(-2) and 2 x 10(-19) cm(2), respectively.

Nyckelord

bipolar transistors

low-frequency noise

noise modeling

polysilicon emitter

semiconductor device noise

1/f noise

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