Metal-nonmetal transition in p-type SiC polytypes

• The critical concentration for the metal-nonmetal transition has been calculated fur the polytypes 3C, 4H, and 6H of SiC, duped with Al, Ga, B, and Sc. Three different computational methods have been utilized: the first is Mott's original model, the second is an extended Mott-Hubbard model, and the third is based on the total energy of the metallic and nonmetallic phases. All three methods show similar results. For comparison, calculations fur p-type Ge and Si materials have also been performed.

Nyckelord

transmutation-doped ge-70-ga

electrical-properties

insulator-transition

band-structure

n-type

silicon

semiconductors

shifts

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)