Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

QC 20170706
4H-SiC electronics can operate at high temperature (HT), e.g., 300A degrees C to 500A degrees C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P-E hysteresis loops measured at room temperature showed maximum 2P (r) of 48 mu C/cm(2), large enough for wide read margins. P-E loops were measurable up to 450A degrees C, with losses limiting measurements above 450A degrees C. The phase-transition temperature was determined to be about 660A degrees C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
Ferroelectric
high temperature (HT)
memory device
silicon carbide (4H-SiC)
thin film
vanadium-doped bismuth titanate (BiTV)

Ingår i:Journal of Electronic Materials: SPRINGER46:7, s. 4478-44840361-52351543-186X

Av författaren/redakt...: Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl ...

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