Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices

• High voltage 4H-SiC bipolar junction transistors (BJTs) with modified etched junction termination extension (JTE) are fabricated and optimized in terms of the length and remaining dose of JTEs. It is found that the JTE1 is the most effective one in spreading the electric field. Hence, for a given total termination length, a decremental JTE length from the innermost edge to the outermost mesa edge of the device results in better modification of the electric field. A breakdown voltage of 4.95 kV is measured for the modified device, which shows ~20% improvement of the termination efficiency for no extra cost or extra process step. Equal-size BJTs by interdigitated-emitter with different number of fingers and cell pitches are fabricated. It is presented that the maximum current gain decreases by having more fingers while the maximum current gain is achieved at higher current density.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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pop (subject category)

art (subject category)