WFRF:(Elahipanah Hossein)
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- Elahipanah, Hossein,1982-KTH,Elektronik,Electronics (author)
A Wafer-Scale Self-Aligned Ni-Silicide (SALICIDE) Low-Ohmic Contact Technology on n-type 4H-SiC
- Article/chapterEnglish2017
Publisher, publication year, extent ...
- ECS,2017
- electronicrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-211302
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-211302URI
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- Language:English
- Summary in:English
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- SwePubSwePub
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Notes
- QC 20170731
- A self-aligned nickel (Ni) silicide process for n-type Ohmic contacts on 4H-SiC is demonstrated and electrically verified in a wafer-scale device process. The key point is to anneal the contacts in two steps. The process is successfully employed on wafer-level and a contact resistivity below 5×10-6 Ω·cm2 is achieved. The influence of the proposed process on the oxide quality is investigated and no significant effect is observed. The proposed self-aligned technology eliminates the undesirable effects of the lift-off process. Moreover, it is simple, fast, and manufacturable at wafer-scale, which saves time and cost.
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Added entries (persons, corporate bodies, meetings, titles ...)
- Asadollahi, AliKTH,Elektronik(Swepub:kth)u1vtio7s (author)
- Ekström, MattiasKTH,Elektronik(Swepub:kth)u1l6zf9x (author)
- Salemi, Arash,1976-KTH,Elektronik(Swepub:kth)u14aqahn (author)
- Zetterling, Carl-MikaelKTH,Elektronik(Swepub:kth)u15o61ns (author)
- Östling, MikaelKTH,Elektronik(Swepub:kth)u1u0kle4 (author)
- KTHElektronik (creator_code:org_t)
Related titles
- In:ECS Journal of Solid State Science and Technology: ECS6:4, s. 197-2002162-87692162-8777
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