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Thickness dependent...
Thickness dependent performance of Na0.5K0.5NbO3/sapphire thin film varactors
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Cho, C. R. (författare)
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- Grishin, Alexander M. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Integrated Ferroelectrics. - 1058-4587 .- 1607-8489. ; 39:1-4, s. 1353-1360
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- Perfect c-axis oriented Na0.5K0.5NbO3 (NKN) films have been pulsed laser deposited on Al2O3(01 (1) under bar2) single crystals (r-cut sapphire) for voltage tunable microwave device applications. Thickness dependence of dielectric performance of the NKN/sapphire interdigital capacitors (IDCs) has been studied. 40 V bias tunability and dielectric loss tandelta of 4 burr slot IDCs have been found to be 24.6 % and 2.86 % for 1.2 mum thick NKN film, and 6.1 % and 0.83 % for 0.14 mum thick NKN film, respectively. Low leakage currents and high breakdown voltages are observed in these structures.
Nyckelord
- tunable ferroelectric film
- thickness dependence
- interdigital capacitor
- capacitors
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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