Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si

Araujo, C. M.Moysés Araújo, C., Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil (author)

Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN : Si

QC 20100525
The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, N-c, for the metal-nonmetal transition is estimated in three different ways: from using the generalized Drude approach (GDA) for the resistivity; from the vanishing of the chemical potential calculated using the dielectric function model with a Lorentz-Lorenz correction; from finding the crossing point between the energy in the insulating and metallic states. The bandgap narrowing (BGN) has been determined theoretically and experimentally above the MNM transition, The experimental data have been obtained with photoluminescence measurements. Theoretical and experimental results are in rough agreement in the range of impurity concentration of interest.

Fernandez, J. R. L.Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil (author)
da Silva, A. F.Ferreira Da Silva, A., Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil (author)
Pepe, I.Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, Brazil (author)
Leite, J. R. (author)
Sernelius, BoLinköpings universitet,Tekniska högskolan,Teoretisk Fysik(Swepub:liu)bose02 (author)
Tabata, A.Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil (author)
Persson, ClasDepartment of Physics, Uppsala University, SE-751 21 Uppsala, Sweden(Swepub:kth)u16hf74r (author)
Ahuja, R.Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden (author)
As, D. J.Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany (author)
Schikora, D.Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany (author)
Lischka, K.Universität Paderborn, FB-6 Physik, D-33095 Paderborn, Germany (author)
Moysés Araújo, C., Instituto de Física, Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, Bahia, BrazilInstituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil (creator_code:org_t)

By the author/editor: Araujo, C. M.; Fernandez, J. R. ...; da Silva, A. F.; Pepe, I.; Leite, J. R.; Sernelius, Bo; show more...; Tabata, A.; Persson, Clas; Ahuja, R.; As, D. J.; Schikora, D.; Lischka, K.; show less...

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