Electrical characterization of titanium-based ohmic contacts to 4H-Silicon carbide for high-power and high-temperature operation

QC 20100525
We report on titanium-based ohmic contacts (titanium carbide. titanium tungsten, and titanium) on both highly doped epilayers (n(+) and p(+)) and Al-ion-implanted layers. The TiC contact layer was epitaxially grown on epilayers as well as an Al-ion-implanted layers of 4H-SiC by co-evaporation Ti and C-60 under an ultra-high vacuum condition at low temperature (<500 degreesC). For comparison and long-term stability test, we also deposited TiW (weight ratio 30 : 710) ohmic contacts to p and n-type epilayers of 4H-SiC. The specific contact resistances (p(c)) were found to be as low as p- 5X10(-6), 2x10(-5), 2x10(-5), 3x10(-4), 4x10(-5), and 1X10(-4) Omegacm(2) for TiC contacts to n(+) epilayers, p(+) epilayers, and Al-ion-implanted layers, Ti contacts to p(+) epilayers, and TiW contacts to p(+) and to n(+) epilayers, respectively, by using linear transmission line method (TLM) measurements. During the long-term reliability tests in a vacuum chamber, we found that evaporated Au capping layers helped to keep the contacts from degrading.

Zetterling, Carl-MikaelKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u15o61ns (författare)
Östling, MikaelKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u1u0kle4 (författare)
Moon, B. M. (författare)
KTHMikroelektronik och informationsteknik, IMIT (creator_code:org_t)

Ingår i:Journal of the Korean Physical Society40:4, s. 572-5760374-48841976-8524

Av författaren/redakt...: Lee, S. K.; Zetterling, Carl ...; Östling, Mikael; Moon, B. M.

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