Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC

• Comparative Hall effect investigations are conducted on N- and P-implanted as well as on (N+P)-coimplanted 4H-SiC epilayers. Box profiles with three different mean concentrations ranging from 2.5x10(18) to 3x10(20) cm(-3) to a depth of 0.8 mum are implanted at 500 degreesC into the (0001)-face of the initially p-type (Al-doped) epilayers. Postimplantation anneals at 1700 degreesC for 30 min are conducted to electrically activate the implanted N+ and P+ ions. Our systematic Hall effect investigations demonstrate that there is a critical donor concentration of (2-5)x10(19) cm(-3). Below this value, N- and P-donors result in comparable sheet resistances. The critical concentration represents an upper limit for electrically active N donors, while P donors can be activated at concentrations above 10(20) cm(-3). This high concentration of electrically active P donors is responsible for the observed low sheet resistance of 35 Omega/square, which is about one order of magnitude lower than the minimum sheet resistance achieved by N implantation.

Nyckelord

phosphorus implantation

4h-silicon carbide

growth

donors

endor

epr

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)