10+ kV implantation-free 4H-SiC PiN diodes

• Implantation-free mesa etched 10+ kV 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. An area-optimized junction termination extension (O-JTE) is implemented in order to achieve a high breakdown voltage. The diodes design allows a high breakdown voltage of about 19.3 kV according to simulations by Sentaurus TCAD. No breakdown voltage is recorded up to 10 kV with a very low leakage current of 0.1 μA. The current spreading within the thick drift layer is considered and a voltage drop (VF) of 8.3 V and 11.4 V are measured at 50 A/cm2 and 100 A/cm2, respectively. The differential on-resistance (Diff. Ron) of 67.7 mΩ.cm2 and 55.7 mΩ.cm2 are measured at 50 A/cm2 and 100 A/cm2, respectively.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

Conductivity modulation

Differential on-resistance

Forward voltage drop

Implantation-free

PiN diode

Ultra-high-voltage

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