Sökning: WFRF:(Elahipanah Hossein)
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10+ kV implantation...
10+ kV implantation-free 4H-SiC PiN diodes
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- Salemi, Arash (författare)
- KTH
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- Elahipanah, Hossein (författare)
- KTH,Integrerade komponenter och kretsar
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- Zetterling, Carl-Mikael, 1966- (författare)
- KTH,Integrerade komponenter och kretsar
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visa fler...
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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visa färre...
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(creator_code:org_t)
- Trans Tech Publications Ltd, 2017
- 2017
- Engelska.
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Ingår i: 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016. - : Trans Tech Publications Ltd. - 9783035710434 ; , s. 423-426
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- Implantation-free mesa etched 10+ kV 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. An area-optimized junction termination extension (O-JTE) is implemented in order to achieve a high breakdown voltage. The diodes design allows a high breakdown voltage of about 19.3 kV according to simulations by Sentaurus TCAD. No breakdown voltage is recorded up to 10 kV with a very low leakage current of 0.1 μA. The current spreading within the thick drift layer is considered and a voltage drop (VF) of 8.3 V and 11.4 V are measured at 50 A/cm2 and 100 A/cm2, respectively. The differential on-resistance (Diff. Ron) of 67.7 mΩ.cm2 and 55.7 mΩ.cm2 are measured at 50 A/cm2 and 100 A/cm2, respectively.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Nyckelord
- Conductivity modulation
- Differential on-resistance
- Forward voltage drop
- Implantation-free
- PiN diode
- Ultra-high-voltage
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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