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  • da Silva, A. F. (author)

Critical concentration for the doping-induced metal-nonmetal transition in cubic and hexagonal GaN

  • Article/chapterEnglish2002

Publisher, publication year, extent ...

  • AIP Publishing,2002
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-21838
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-21838URI
  • https://doi.org/10.1063/1.1499202DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • QC 20100525
  • The critical concentration for the metal-nonmetal transition has been calculated for n-type and p-type GaN. Both cubic and hexagonal structures of GaN have been considered. Three different computational methods have been utilized: the first is the original Mott model, the second is an extended Mott-Hubbard model, and the third method is based on total energy of the metallic and the nonmetallic phases. All three methods show a similar value of the critical concentration, about 10(18) and 10(20) cm(-3) for n-type and p-type doped materials, respectively.

Subject headings and genre

  • acceptor binding-energies
  • optical-properties
  • shallow donors
  • n-type
  • doped semiconductors
  • dynamical properties
  • dielectric function
  • wurtzite gan
  • aln
  • si

Added entries (persons, corporate bodies, meetings, titles ...)

  • Persson, Clas (author)

Related titles

  • In:Journal of Applied Physics: AIP Publishing92:5, s. 2550-25550021-89791089-7550

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Persson, Clas
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