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Critical concentrat...
Critical concentration for the doping-induced metal-nonmetal transition in cubic and hexagonal GaN
- Article/chapterEnglish2002
Publisher, publication year, extent ...
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AIP Publishing,2002
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-21838
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-21838URI
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https://doi.org/10.1063/1.1499202DOI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20100525
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The critical concentration for the metal-nonmetal transition has been calculated for n-type and p-type GaN. Both cubic and hexagonal structures of GaN have been considered. Three different computational methods have been utilized: the first is the original Mott model, the second is an extended Mott-Hubbard model, and the third method is based on total energy of the metallic and the nonmetallic phases. All three methods show a similar value of the critical concentration, about 10(18) and 10(20) cm(-3) for n-type and p-type doped materials, respectively.
Subject headings and genre
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acceptor binding-energies
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optical-properties
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shallow donors
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n-type
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doped semiconductors
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dynamical properties
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dielectric function
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wurtzite gan
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aln
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si
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In:Journal of Applied Physics: AIP Publishing92:5, s. 2550-25550021-89791089-7550
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