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Effects of proton i...
Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots
- Article/chapterEnglish2002
Publisher, publication year, extent ...
Numbers
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LIBRIS-ID:oai:DiVA.org:kth-22141
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-22141URI
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https://doi.org/10.1109/TNS.2002.806018DOI
Supplementary language notes
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Language:English
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Summary in:English
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Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20100525
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The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3-D) quantum confinement.. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAS/AlGaAS), QD surface density (4 x 10(8) to 3 x 10(10) cm(-2)), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.
Subject headings and genre
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carrier dynamics
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compound semiconductors
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displacement damage
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photoluminescence
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Stranski-Krastanow quantum dots
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enhanced radiation hardness
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light-emitting-diodes
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deep levels
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gaas
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damage
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lasers
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transformation
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dependence
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wells
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degradation
Added entries (persons, corporate bodies, meetings, titles ...)
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Marcinkevicius, SauliusKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u16tz6ld
(author)
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Siegert, J.
(author)
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Cechavicius, B.
(author)
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Magness, B.
(author)
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Taylor, W.
(author)
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Lobo, C.
(author)
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KTHMikroelektronik och informationsteknik, IMIT
(creator_code:org_t)
Related titles
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In:IEEE Transactions on Nuclear Science49:6, s. 2844-28510018-94991558-1578
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