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Schottky-barrier be...
Schottky-barrier behavior of metals on n- and p-type 6H-SiC
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Aboelfotoh, M. O. (författare)
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- Fröjdh, Christer, 1952- (författare)
- Mittuniversitetet,Institutionen för informationsteknologi och medier (-2013)
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- Petersson, C. Sture (författare)
- Mittuniversitetet,KTH,Mikroelektronik och informationsteknik, IMIT,Institutionen för informationsteknologi och medier (-2013)
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(creator_code:org_t)
- 2003
- 2003
- Engelska.
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 67:7, s. 075312-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The Schottky-barrier height of a number of metals (Ti, Ni, Cu, and Au) on n- and p-type Si-terminated 6H-SiC has been measured in the temperature range 150-500 K. It is found that the barrier height to n-type 6H-SiC does not exhibit a temperature dependence, while for p-type 6H-SiC the change in the barrier height with temperature follows very closely the change in the indirect energy gap in 6H-SiC. These results are inconsistent with models of Schottky-barrier formation based on the concept of a charge neutrality level. Furthermore, the present results cannot be reconciled with a defect pinning mechanism, contrary to the conclusions of earlier studies on III-V compound semiconductors. We suggest that chemical bonding at the metal-semiconductor interface plays an important role in determining the Schottky-barrier height.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- gap states
- electronic-structure
- conduction-band
- chemical trends
- dangling bonds
- interface
- defects
- contacts
- silicon
- dependence
- Electrical engineering, electronics and photonics
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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