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  • Zhang, XiaoliangUppsala universitet,Fysikalisk kemi (author)

Inorganic CsPbI3 Perovskite Coating on PbS Quantum Dot for Highly Efficient and Stable Infrared Light Converting Solar Cells

  • Article/chapterEnglish2018

Publisher, publication year, extent ...

  • 2017-10-10
  • Wiley-VCH Verlagsgesellschaft,2018
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-225455
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-225455URI
  • https://doi.org/10.1002/aenm.201702049DOI
  • https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-348982URI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • QC 20180405
  • Solution-processed colloidal quantum dot (CQD) solar cells harvesting the infrared part of the solar spectrum are especially interesting for future use in semitransparent windows or multilayer solar cells. To improve the device power conversion efficiency (PCE) and stability of the solar cells, surface passivation of the quantum dots is vital in the research of CQD solar cells. Herein, inorganic CsPbI3 perovskite (CsPbI3-P) coating on PbS CQDs with a low-temperature, solution-processed approach is reported. The PbS CQD solar cell with CsPbI3-P coating gives a high PCE of 10.5% and exhibits remarkable stability both under long-term constant illumination and storage under ambient conditions. Detailed characterization and analysis reveal improved passivation of the PbS CQDs with the CsPbI3-P coating, and the results suggest that the lattice coherence between CsPbI3-P and PbS results in epitaxial induced growth of the CsPbI3-P coating. The improved passivation significantly diminishes the sub-bandgap trap-state assisted recombination, leading to improved charge collection and therefore higher photovoltaic performance. This work therefore provides important insight to improve the CQD passivation by coating with an inorganic perovskite ligand for photovoltaics or other optoelectronic applications.

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  • Zhang, JindanBeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China. (author)
  • Phuyal, DibyaUppsala universitet,Molekyl- och kondenserade materiens fysik(Swepub:uu)dibph977 (author)
  • Du, JuanBeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China. (author)
  • Tian, LeiUppsala universitet,Fysikalisk kemi(Swepub:uu)leiti846 (author)
  • Öberg, Viktor A.Uppsala universitet,Fysikalisk kemi(Swepub:uu)vikob369 (author)
  • Johansson, Malin B,1972-Uppsala universitet,Fysikalisk kemi(Swepub:uu)maljo942 (author)
  • Cappel, Ute B.Uppsala universitet,Molekyl- och kondenserade materiens fysik(Swepub:uu)uteca781 (author)
  • Karis, OlofUppsala universitet,Molekyl- och kondenserade materiens fysik,Uppsala Univ, Mol & Condensed Matter Phys, Dept Phys & Astron, S-75120 Uppsala, Sweden.(Swepub:uu)olofkari (author)
  • Liu, JianhuaBeihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China. (author)
  • Rensmo, HåkanUppsala universitet,Molekyl- och kondenserade materiens fysik(Swepub:uu)hakanrm (author)
  • Boschloo, GerritUppsala universitet,Fysikalisk kemi(Swepub:uu)gerrbosc (author)
  • Johansson, Erik M. J.Uppsala universitet,Fysikalisk kemi(Swepub:uu)erjoh367 (author)
  • Uppsala universitetFysikalisk kemi (creator_code:org_t)

Related titles

  • In:Advanced Energy Materials: Wiley-VCH Verlagsgesellschaft8:61614-68321614-6840

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