Identification of hydrogen related defects in proton implanted float-zone silicon

• Hydrogen related defects in high purity n-type float zone silicon samples have been studied by means of Deep Level Transient Spectroscopy. They were introduced, as well as the characteristic vacancy-oxygen (VO) and divacancy (V-2) centers, by MeV proton implantation. Two hydrogen related defect levels were resolved at 0.32 eV and 0.45 eV below the conduction band edge (E-c). Careful annealing studies indicate strongly that a third hydrogen related level, overlapping with the singly negative charge state level of V-2, is also present in the implanted samples. The annealing behavior of the hydrogen related defects has been compared with literature data leading to a rather firm identification. The E-c-0.32 eV level originates from a VO center partly saturated with hydrogen (a VOH complex) while the E-c-0.45 eV level may be ascribed to a complex involving a monovacancy and a hydrogen atom ( a VH complex). The third hydrogen related defect is tentatively ascribed to a complex involving a hydrogen atom and a divacancy ( a V2H complex).

Nyckelord

level transient spectroscopy

si-a center

irradiated silicon

electron traps

divacancy

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